SI7210-B-00-IVR SILÍCIO
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SI7210-B-00-IVR SILICON
• High-Sensitivity Hall Effect Sensor
• Adjustable Full Scale (Standard Offerings are ±20mT and ±200 mT Full Scale)
• Integrated Digital Signal Processing for Temperature and Offset Drift Compensation
• High-Precision 13-bit Signal Path
• Output Bandwidth up to 20 kHz
• Sensitivity Drift < ±5% over 0-70 °C
• Digital I2C Interface
• Four Selectable I2C Addresses
• Optional Digital Alert Output
• Wide 1.7 to 5.5 V Power Supply Voltage
• Temperature Sensor Data also available by I2C (accuracy ±1°C)
• Low 50 nA Sleep Mode Current Consumption
• Industry-Standard Packaging
• Surface-Mount SOT23-5
• 1.4 x 1.6 mm 8-pin DFN package
• High-Sensitivity Hall Effect Sensor
• Adjustable Full Scale (Standard Offerings are ±20mT and ±200 mT Full Scale)
• Integrated Digital Signal Processing for Temperature and Offset Drift Compensation
• High-Precision 13-bit Signal Path
• Output Bandwidth up to 20 kHz
• Sensitivity Drift < ±5% over 0-70 °C
• Digital I2C Interface
• Four Selectable I2C Addresses
• Optional Digital Alert Output
• Wide 1.7 to 5.5 V Power Supply Voltage
• Temperature Sensor Data also available by I2C (accuracy ±1°C)
• Low 50 nA Sleep Mode Current Consumption
• Industry-Standard Packaging
• Surface-Mount SOT23-5
• 1.4 x 1.6 mm 8-pin DFN package
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