NCD57084DR2G ON
| Available |
NCD57084DR2G ON
• High Peak Output Current (+7A/−7 A)
• Low Output Impedance for Enhanced IGBT Driving
• Short Propagation Delays with Accurate Matching
• DESAT Protection with Programmable Delay
• Negative Voltage (Down to −9 V) Capability for DESAT
• IGBT Gate Clamping during Short Circuit
• IGBT Gate Active Pull Down
• Soft Turn Off During IGBT Short Circuit
• Tight UVLO Thresholds for Bias Flexibility
• Output Partial Pulse Avoidance During UVLO/DESAT (Restart)
• 3.3 V, 5 V, and 15 V Logic Input
• 2.5 kVrms Galvanic Isolation
• High Transient Immunity
• High Electromagnetic Immunity
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
• High Peak Output Current (+7A/−7 A)
• Low Output Impedance for Enhanced IGBT Driving
• Short Propagation Delays with Accurate Matching
• DESAT Protection with Programmable Delay
• Negative Voltage (Down to −9 V) Capability for DESAT
• IGBT Gate Clamping during Short Circuit
• IGBT Gate Active Pull Down
• Soft Turn Off During IGBT Short Circuit
• Tight UVLO Thresholds for Bias Flexibility
• Output Partial Pulse Avoidance During UVLO/DESAT (Restart)
• 3.3 V, 5 V, and 15 V Logic Input
• 2.5 kVrms Galvanic Isolation
• High Transient Immunity
• High Electromagnetic Immunity
• NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable
• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant
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