IMBG65R107M1H Infineon

IMBG65R107M1H infineon
IMBG65R107M1H infineon
IMBG65R107M1H infineon
IMBG65R107M1H infineon

IMBG65R107M1H infineon

Disponível
IMBG65R107M1H   infineon

•Optimizedswitchingbehaviorathighercurrents
•CommutationrobustfastbodydiodewithlowQf
•Superiorgateoxidereliability
•Tj,max=175°Candexcellentthermalbehavior
•LowerRDS(on)andpulsecurrentdependencyontemperature
•Increasedavalanchecapability
•Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V)
•Kelvinsourceprovidesupto4timeslowerswitchinglosses

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